MS67C10
N & P Channel 60-V Dual MOSFETs
Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • Fast switching • Green Device Available • Suit for 4.5V.