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MS67C10 Datasheet

Part Number MS67C10
Manufacturers Bruckewell
Logo Bruckewell
Description N&P-Channel MOSFET
Datasheet MS67C10 DatasheetMS67C10 Datasheet (PDF)

MS67C10 N & P Channel 60-V Dual MOSFETs Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • Fast switching • Green Device Available • Suit for 4.5V.

  MS67C10   MS67C10






N&P-Channel MOSFET

MS67C10 N & P Channel 60-V Dual MOSFETs Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • Fast switching • Green Device Available • Suit for 4.5V Gate Drive Applications Applications • DC Fan • Motor Drive Applications • Networking • Half / Full Bridge Topology Packing & Order Information 3,000/Reel SO-8 Package information Graphic symbol Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev. A -2014 MS67C10 N & P Channel 60-V Dual MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter Rating VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 ID Drain Current - Continuous (TC =25°C) Drain Current - Continuous (TC =70°C) IDM Drain Current - Pulsed1 4.5 -3.5 2.85 -2.21 18 -14 Power Dissipation (TC =25°C) PD Power Dissipation - Derate above 25°C 3.57 0.028 TJ TSTG Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Unit V V A A A W W/°C °C °C Thermal Resistance Ratings Symbol Parameter RθJA Thermal Resistance Junction to ambient RθJC Thermal Resistance Juncti.


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