MS6N95

MS6N95 950V N-Channel MOSFET Description The MS6N95 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 Ω )@VGS=10V Gate Charge (Typical 33nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) RoHS compliant package Application Adapter Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage ID Drain Current -Continuous (TC=25°C) Drain Current -Continuous (TC=100°C) IDM Drain Current –Pulsed VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Value 950 6 3.8 24 ±30 650 16.7 4.5 Unit V A A A V mJ mJ V/ns Publication Order Number: [MS6N95] © Bruckewell Technology Corporation Rev. A -2014 MS6N95 950V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Power Dissipation (TC=25°C) PD - Derate above 25°C TJ/TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds ●Drain current limit...