MS7N60
N-Channel Enhancement Mode Power MOSFET
Description The MS7N60 is a N-channel enhancement-mode MOSFET , providing...
MS7N60
N-Channel Enhancement Mode Power
MOSFET
Description The MS7N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Adapter Switching Mode Power Supply
Packing & Order Information 50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source
Voltage
VGS Gate-Source
Voltage
Drain Current -Continuous (TC=25°C) ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current Pulsed
IAR Avalanche Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Drain current limited by maximum junction temperature
Value 600 ±30 7.0 4.4 28 7.0 187 7.0 4.4
Unit V V A A A V mJ mJ
V/ns
Publication Order Number: [MS7N60]
© Bruckewell Technology Corporation Rev. A -2014
MS7N60
N-Channel Enhancement Mode Power
MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Maximum Temperature for Soldering @ Lead at 0.125 TL
in(0.318mm) from case for 10 seconds
TPKG
Maximum Temperature for Soldering @ Package Body for 10 seconds
...