MS8250-48

SCHOTTKY DIODES TM ® Silicon Low Barrier MS8250 – 48 Features ● For Detector and Mixer Applications ● Vertical Offset Contact ● Low Capacitance Package (0.09 pF) ● Available as Bondable Chips ● Priced for Commercial Applications Specifications @ 25°C ● VF (1 mA): 0.39 V Max. ● VB (10 A): 3 V Min. ● IR (1 V): 100 nA Max. ● RS (1 mA): 8  Typ. ● CT (0 V, 1 MHz): 0.24 pF Max., 0.20 pF Typ. Maximum Ratings Incident Power Reverse Voltage Forward Current Power Dissipation Operating Temperature Storage Temperature +20 dBm @ 25°C 3V 10 mA @ 25°C 50 mW @ 25°C -65°C to +150°C -65°C to +150°C Description The MS8520-48 is low barrier, N-type, silicon Schottky diode designed for applications in microwave mixers and detectors at frequencies from below 100 MHz to beyond 40 GHz. These Schottky diodes are packaged in the newly developed ultra-low capacitance M48 package that has shown improved sensitivity in Doppler Transceiver mixer/detector mounts at 24 GHz. Microsemi’s vertical offset chip bond pad design allows rotational symmetry in a waveguide mount and rugged bonding to the top contact without damage to the junction. MSC’s semiconductor process also results in a low 1/F noise device with low specified RS and CJ values. Copyright  2008 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 TM ® M48 E F G A Dia. D C B Dia. DIM A B C D E F G CP = 0.09 pF. LP = 0.50 nH. INCHES MIN. MAX. 0.059 0.064 0....