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MSA-0311 Datasheet

Part Number MSA-0311
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA-0311 DatasheetMSA-0311 Datasheet (PDF)

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical P1 dB at --1.0 GHz • Unconditionally Stable (k>1) • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices”. Description The MSA-0311 is a low cost silicon bipolar Monolithic Microwave Integrate.

  MSA-0311   MSA-0311






Cascadable Silicon Bipolar MMIC Amplifier

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical P1 dB at --1.0 GHz • Unconditionally Stable (k>1) • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices”. Description The MSA-0311 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in the surface mount plastic SOT-143 package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- SOT-143 Package zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) C block IN MSA C block OUT Vd = 4.7 V 2 MSA-0311 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 240 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 500°C/W Notes: 1. Permanent damage may occur if an.


2006-03-03 : STA500    STA501    STA501A    STA502    STA504A    STA505    STA505A    STA506    STA506A    STA508   


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