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MSC010SDA170B

Microsemi

Zero Recovery Silicon Carbide Schottky Diode

MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky bar...



MSC010SDA170B

Microsemi


Octopart Stock #: O-1526715

Findchips Stock #: 1526715-F

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Description
MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA170B device is a 1700 V, 10 A SiC SBD in a
More View TO-247 package. Features The following are key features of the MSC010SDA170B device: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche energy rated • RoHS compliant Benefits The following are benefits of the MSC010SDA170B device: • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density Applications The MSC010SDA170B device is designed for the following applications: • Power factor correction (PFC) • Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers • Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters • Snubber/clamp diode 053-4112 MSC010SDA170B Datasheet Revision A 1 Device Specifications Device Specifications This section details the device specifications for the MSC010SDA170B device. Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC010SDA170B device. TC = 25 °C unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1700 V VRRM Maximum peak repetitive reverse voltage 1700 VRWM Maximum working peak reverse voltage 1700 IF Maximum DC forward current TC = 25 °C 31 A TC = 135 °C 14 TC = 145 °C 12 IFRM Repetitive peak forward surge current (TC = 25 °C, 43 tp = 8.3 ms, half sine wave) IFSM Non-repetitive forward surge current (TC = 25 °C, 90 tp = 8.3 ms, half sine wave) Ptot Power dissipation TC = 25 °C 163 W TC = 110 °C 71 EAS Single pulse avalanche energy (starting TJ = 25 °C, L = 2 .0 mH, peak IL = 10 A) 100 mJ 053-4112 MSC010SDA170B Datasheet Revision A 2 Device Specifications The following table shows the thermal and mechanical characteristics of the MSC010SDA170B device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions Min Typ Max Unit RθJC TJ, TSTG TL Wt Junction-to-case thermal resistance Operating junction and storage temperature range Lead temperature for 10 seconds Package weight 0.63 –55 to 175 300 0.22 0.92 °C/W °C °C oz 6.2 g Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m Electrical Performance The following table shows the static characteristics of the MSC010SDA170B device. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Min Typ VF Forward voltage IF = 10 A, TJ = 25 °C 1.5 IF = 10 A, TJ = 175 °C 2.1 IRM Reverse leakage cur






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