MSC0211GE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ ...
MSC0211GE
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected
Lead Free
Application
● PWM application ● Load switch
PIN Configuration
Marking and pin assignment
TSSOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0211GE
MSC0211GE
TSSOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±10 11 44 1.6 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistan...
