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MSC030SDA330B

Microchip

Zero Recovery Silicon Carbide Schottky Diode

MSC030SDA330B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky bar...


Microchip

MSC030SDA330B

File Download Download MSC030SDA330B Datasheet


Description
MSC030SDA330B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC030SDA330B device is a 3300 V, 30 A SiC SBD in a two-lead TO-247 package. Features The following are key features of the MSC030SDA330B device: No reverse recovery Low forward voltage Low leakage current RoHS compliant Benefits The following are benefits of the MSC030SDA330B device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density Applications The MSC030SDA330B device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode – Switch-mode power supply – Inverters/converters – Motor controllers Freewheeling diode – Switch-mode power supply – Inverters/converters Snubber/clamp diode © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004271A-page 1 MSC030SDA330B Device Specifications 1. Device Specifications This section shows the specifications of the MSC030SDA330B device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC030SDA330B device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol VR VRRM VRWM IF IFRM IFSM PTOT Parameter Ratings Uni...




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