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MSC050SDA0170B

Microsemi

Zero Recovery Silicon Carbide Schottky Diode

MSC050SDA0170B Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview This section shows the product overvie...


Microsemi

MSC050SDA0170B

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Description
MSC050SDA0170B Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview This section shows the product overview for the MSC050SDA170B device. 1.1 Features The following are key features of the MSC050SDA170B device: No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the MSC050SDA170B device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The MSC050SDA170B device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4095 MSC050SDA0170B Datasheet Revision A 1 2 2.1 Device Specifications This section details the specifications for the MSC050SDA170B device. Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC050SDA170B device. All ratings: TC = 25 °C unless otherwise specified. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1700 V VRRM Maximum peak repetitive reverse voltage 1700 VRWM Maximum working peak reverse voltage 1700 IF Maximum DC forward current TC = 25 °C 136 A TC = 135 °C 62 TC = 145 °C 51 IFRM Repetitive peak forward surge current (TC = 25 °C, tp = 8.3 ms, ...




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