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MSC060SMA070B

Microsemi

Silicon Carbide N-Channel Power MOSFET

MSC060SMA070B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET produc...



MSC060SMA070B

Microsemi


Octopart Stock #: O-1526719

Findchips Stock #: 1526719-F

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Description
MSC060SMA070B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B device is a 700 V, 60 mΩ SiC MOSFET in a TO
More View -247 package. 1.1 Features The following are key features of the MSC060SMA070B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC060SMA070B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership 1.3 Applications The MSC060SMA070B device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7759 MSC060SMA070B Datasheet Revision A 1 2 Device Specifications This section shows the specifications for the MSC060SMA070B device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC060SMA070B device. Table 1 • Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD Characteristic Drain source voltage Continuous drain current at TC = 25 °C Continuous drain current at T C = 100 °C Pulsed drain current1 Gate-source voltage Total power dissipation at TC = 25 °C Linear derating factor Ratings 700 39 28 100 23 to –10 143 0.94 Unit V A V W W/°C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics for the MSC060SMA070B device. Table 2 • Thermal and Mechanical Characteristics Symbol RθJC TJ TSTG TL Characteristic Junction-to-case thermal resistance Operating junction temperature Storage temperature Soldering temperature for 10 seconds (1.6 mm from case) Mounting torque, 6-32 or M3 screw Wt Package weight Min Typ Max Unit 0.70 1.05 °C/W –55 175 °C –55 150 260 10 lbf-in 1.1 N-m 0.22 oz 6.2 g 050-7759 MSC060SMA070B Datasheet Revision A 2 2.2 Electrical Performance The following table shows the static characteristics for the MSC060SMA070B device. TJ = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol V(BR)DSS RDS(on) VGS(th) ΔVGS(th)/ΔTJ Characteristic Drain-source breakdown voltage Drain-source on resistance 1 Gate-source threshold voltage Threshold vol






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