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MSC080SMA120B

Microchip

N-Channel MOSFET

1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B Product Overview 1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC)...


Microchip

MSC080SMA120B

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Description
1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B Product Overview 1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247. Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant Benefits High efficiency to enable lighter and more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership Applications Photovoltaic (PV) inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger Power supply and distribution Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00004672B - 1 MSC080SMA120B Device Specifications 1. 1.1 1.2 Device Specifications This section shows the specifications of this device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of this device. Table 1-1. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS Drain source voltage Continuous drain current at TC = 25 °C Continuous drain current at TC = 100 °C Pulsed drain current1 Gate-source voltage Transient gate-source voltage PD Total power dissip...




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