This version: Apr. 8. 1999
Semiconductor MSC23CV16458D-xxBS4
1,048,576-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MOD...
This version: Apr. 8. 1999
Semiconductor MSC23CV16458D-xxBS4
1,048,576-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23CV16458D-xxBS4 is an 1,048,576-word x 64-bit
CMOS dynamic random access memory module which is composed of four 16Mb(1Mx16) DRAMs in TSOP packages mounted with four decoupling
capacitors. This is an 144-pin small outline dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.
FEATURES
· 1,048,576-word x 64-bit organization · 144-pin Small Outline Dual In-line Memory Module · Gold tab · Single 3.3V power supply, ±0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 1024cycles/16ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO, read modify write capability
PRODUCT FAMILY
Access Time (Max.) tRAC MSC23CV16458D-50BS4 www.DataSheet4U.com MSC23CV16458D-60BS4 MSC23CV16458D-70BS4 50ns 60ns 70ns tAA 25ns 30ns 35ns tCAC 13ns 15ns 20ns tOEA 13ns 15ns 20ns Cycle Time (Min.) 84ns 104ns 124ns Power Dissipation (Max.) Operating 1800mW 1656mW 1512mW 7.2mW Standby
Family
Semiconductor
MSC23CV16458D
MODULE OUTLINE
MSC23CV16458D-xxBS4
(Unit : mm) 2.6Max. 67.60±0.5
20.0±0.13
25.4±0.13
6.0±0.13
A 1
B 143
3.2Min.
3.3
23.20±0.1 2.5±0.2 4.6±0.2 63.60±0.2 67.60±0.2
32.80±0.1 1.00±0.1
R2.0
144 2-φ1.8
www.DataSheet4U.com
2 32.80±0.1 23.20±0.1 2.1±0.2 4.6±0.2 3.7
...
