This version: Mar. 1999
Semiconductor MSC23CV23257D-xxBS4
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE T...
This version: Mar. 1999
Semiconductor MSC23CV23257D-xxBS4
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23CV23257D-xxBS4 is a fully decoded, 2,097,152-word x 32-bit
CMOS dynamic random access memory module composed of four 16Mb DRAMs (2Mx8) in TSOP packages mounted with four decoupling
capacitors on a 72-pin glass epoxy small outline package. This module supports any application where high density and large capacity of storage memory are required.
FEATURES
· 2,097,152-word x 32-bit organization · 72-pin Small Outline Dual In-line Memory module MSC23CV23257D-xxBS4 : Gold tab · Single +3.3V supply ± 0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO capability · Multi-bit test mode capability
PRODUCT FAMILY
Access Time (Max.)
www.DataSheet4U.com Family
tRAC 60ns 70ns
tAA 30ns 35ns
tCAC 15ns 20ns
Cycle Time (Min.) 104ns 124ns
Power Dissipation
Operating (Max.) Standby (Max.)
MSC23CV23257D-60BS4 MSC23CV23257D-70BS4
1296mW 7.2mW 1152mW
Semiconductor
MSC23CV23257D
MODULE OUTLINE
MSC23CV23257D-xxBS4
(Unit : mm) 2.4Max.
25.4±0.13
3.18±0.13 2.0±0.13
1 2.62Typ. *1
71
5.5Min.
44.45±0.1 59.69±0.2
1.00±0.1
*1 The common size difference of the board width 19.78mm of its height is specified as ±0.2. The value above 19.78mm is specified as ±0.5.
R2.0 1.0±0.1
17.78±0.13
...