This version: Apr. 8. 1999
Semiconductor MSC23CV26457D-xxBS8
2,097,152-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MOD...
This version: Apr. 8. 1999
Semiconductor MSC23CV26457D-xxBS8
2,097,152-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23CV26457D-xxBS8 is a 2,097,152-word x 64-bit
CMOS dynamic random access memory module which is composed of eight 16Mb(2Mx8) DRAMs in TSOP packages mounted with eight decoupling
capacitors. This is an 144-pin small outline dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.
FEATURES
· 2,097,152-word x 64-bit organization · 144-pin Small Outline Dual In-line Memory Module · Gold tab · Single 3.3V power supply, ±0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO, read modify write capability · Multi-bit test mode capability
PRODUCT FAMILY
Access Time (Max.) tRAC 50ns 60ns 70ns tAA 25ns 30ns 35ns tCAC 13ns 15ns 20ns tOEA 13ns 15ns 20ns Cycle Time (Min.) 84ns 104ns 124ns Power Dissipation (Max.) Operating 2880mW 2592mW 2304mW 14.4mW Standby
Family
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MSC23CV26457D-50BS8 MSC23CV26457D-60BS8 MSC23CV26457D-70BS8
Semiconductor
MSC23CV26457D
MODULE OUTLINE
MSC23CV26457D-xxBS8
(Unit : mm) 3.80Max. 67.60±0.5
20.0±0.13
25.4±0.13
6.0±0.13
A 1
B 143
3.2Min.
3.3
23.20±0.1 2.5±0.2 4.6±0.2 63.60±0.2 67.60±0.2
32.80±0.1 1.00±0.1
R2.0
144 2-φ1.8
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2 32.80...