This version: Apr.22. 1999
Semiconductor MSC23V27257TD-xxBS9
2,097,152-Word x 72-Bit DYNAMIC RAM MODULE : FAST PAGE MOD...
This version: Apr.22. 1999
Semiconductor MSC23V27257TD-xxBS9
2,097,152-Word x 72-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23V27257TD-xxBS9 is a 2,097,152-word x 72-bit
CMOS dynamic random access memory module which is composed of nine 16Mb(2Mx8) DRAMs in TSOP packages mounted with nine decoupling
capacitors. This is an 168-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.
FEATURES
· 2,097,152-word x 72-bit organization · 168-pin Dual In-line Memory Module · Gold tab · Single 3.3V power supply, ±0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/ 32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO, read modify write capability · Multi-bit test mode capability · Serial Presence Detect
PRODUCT FAMILY
Access Time (Max.) tRAC 50ns 60ns 70ns tAA 25ns 30ns 35ns tCAC 13ns 15ns 20ns tOEA 13ns 15ns 20ns Cycle Time (Min.) 84ns 104ns 124ns Power Dissipation (Max.) Operating 3240mW 2916mW 2592mW 16.2mW Standby
Family www.DataSheet4U.com MSC23V27257TD-50BS9 MSC23V27257TD-60BS9 MSC23V27257TD-70BS9
Semiconductor
MSC23V27257TD
MODULE OUTLINE
MSC23V27257TD-xxBS9
(Unit : mm) 133.35±0.7 *1 131.35 TYP 2 - R2.0 25.40±0.12 17.78±0.1 3.0±0.1 2.70Max.
2 - φ3.0±0.1 A 1 11.43±0.05 36.83±0.05 127.35±0.05 133.35±0.12 54.61±0.05 B C 84 4.0Min.
1.27±0.1
R1.0 4.175±0.13 3.175±...