MSC23V27257TD-XXBS9

This version: Apr.22. 1999 Semiconductor MSC23V27257TD-xxBS9 2,097,152-Word x 72-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V27257TD-xxBS9 is a 2,097,152-word x 72-bit CMOS dynamic random access memory module which is composed of nine 16Mb(2Mx8) DRAMs in TSOP packages mounted with nine decoupling capacitors. This is an 168-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required. FEATURES · 2,097,152-word x 72-bit organization · 168-pin Dual In-line Memory Module · Gold tab · Single 3.3V power supply, ±0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/ 32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO, read modify write capability · Multi-bit test mode capability · Serial Presence Detect PRODUCT FAMILY Access Time (Max.) tRAC 50ns 60ns 70ns tAA 25ns 30ns 35ns tCAC 13ns 15ns 20ns tOEA 13ns 15ns 20ns Cycle Time (Min.) 84ns 104ns 124ns Power Dissipation (Max.) Operating 3240mW 2916mW 2592mW 16.2mW Standby Family www.DataSheet4U.com MSC23V27257TD-50BS9 MSC23V27257TD-60BS9 MSC23V27257TD-70BS9 Semiconductor MSC23V27257TD MODULE OUTLINE MSC23V27257TD-xxBS9 (Unit : mm) 133.35±0.7 *1 131.35 TYP 2 - R2.0 25.40±0.12 17.78±0.1 3.0±0.1 2.70Max. 2 - φ3.0±0.1 A 1 11.43±0.05 36.83±0.05 127.35±0.05 133.35±0.12 54.61±0.05 B C 84 4.0Min. 1.27±0.1 R1.0 4.175±0.13 3.175±...