Semiconductor
This version: Apr. 22. 1999 Previous version: Apr. 1. 1999
MSC23V47257TD-xxBS18
4,194,304-Word x 72-Bit...
Semiconductor
This version: Apr. 22. 1999 Previous version: Apr. 1. 1999
MSC23V47257TD-xxBS18
4,194,304-Word x 72-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23V47257TD-xxBS18 is a 4,194,304-word x 72-bit
CMOS dynamic random access memory module which is composed of eighteen 16Mb(4Mx4) DRAMs in TSOP packages mounted with eighteen decoupling
capacitors. This is an 168-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required.
FEATURES
· 4,194,304-word x 72-bit organization · 168-pin Dual In-line Memory Module · Gold tab · Single 3.3V power supply, ±0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/ 32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO, read modify write capability · Multi-bit test mode capability · Serial Presence Detect
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