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MSC2X50SDA070J

Microsemi

Dual Silicon Carbide Schottky Barrier Diodes

MSC2X51/50SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky...



MSC2X50SDA070J

Microsemi


Octopart Stock #: O-1526732

Findchips Stock #: 1526732-F

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Description
MSC2X51/50SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA070J are dual 700 V, 50 A SiC SBD devic
More View es in a SOT-227 package. Figure 1 • Parallel MSC2X51SDA070J Figure 2 • Anti-parallel MSC2X50SDA070J Features The following are key features of the MSC2X51SDA070J and MSC2X50SDA070J devices: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche-energy rated • RoHS compliant • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X51SDA070J and MSC2X50SDA070J devices: • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density • Direct mounting to the heat sink (isolated package) 053-4105 MSC2X51/50SDA070J Datasheet Revision A 1 Product Overview Applications The MSC2X51SDA070J and MSC2X50SDA070J devices are designed for the following applications: • Power factor correction (PFC) • Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers • Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters • Snubber/clamp diode 053-4105 MSC2X51/50SDA070J Datasheet Revision A 2 Device Specifications Device Specifications This section shows the specifications for the MSC2X51SDA070J and MSC2X50SDA070J devices. Absolute Maximum Ratings The following table shows the absolute maximum ratings per diode for the MSC2X51SDA070J and MSC2X50SDA070J devices. TC = 25 °C, unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VR Maximum DC reverse voltage 700 V IF Maximum DC forward current TC = 80 °C 50 A The following table shows the thermal and mechanical characteristics of the MSC2X51SDA070J and MSC2X50SDA070J devices. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristics Min Typ Max Unit RΘJC Junction-to-case thermal resistance 0.65 0.85 °C/W VISOLATION RMS voltage 2500 V (50 Hz–60 Hz sinusoidal waveform from terminals to mounting base for 1 minute) TJ, TSTG Operating junction and storage tempera- –55 ture range 175 °C Wt Package weight 1.03 oz 29.2 g Mounting torque, M4 screw 10 lbf-in 1.1 N.m 053-4105 MSC2X51/50SDA070J Datasheet Revision A 3 Device Specifications Electrical Performance The following table shows the static characteristics per diode of the MSC2X51SDA070J and MSC2X50SDA070J devices. Table 3 • Static Characteristics Per Diode Symbol Characteristics Test Conditions Min Typ Max Unit VF Diode forward voltage IRM Reverse leakage current QC Total capacitive charge IF =






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