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MSC2X51SDA070J

Microsemi

Dual Silicon Carbide Schottky Barrier Diodes

MSC2X51/50SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky...


Microsemi

MSC2X51SDA070J

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Description
MSC2X51/50SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA070J are dual 700 V, 50 A SiC SBD devices in a SOT-227 package. Figure 1 Parallel MSC2X51SDA070J Figure 2 Anti-parallel MSC2X50SDA070J Features The following are key features of the MSC2X51SDA070J and MSC2X50SDA070J devices: No reverse recovery Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X51SDA070J and MSC2X50SDA070J devices: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density Direct mounting to the heat sink (isolated package) 053-4105 MSC2X51/50SDA070J Datasheet Revision A 1 Product Overview Applications The MSC2X51SDA070J and MSC2X50SDA070J devices are designed for the following applications: Power factor correction (PFC) Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters Snubber/clamp diode 053-4105 MSC2X51/50SDA070J Datasheet Revision A 2 Device Specifications Device Specifications This section shows the specifications for the MSC2...




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