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MSC2X51SDA170J

Microsemi

Dual Silicon Carbide Schottky Barrier Diodes

MSC2X51/50SDA170J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky...


Microsemi

MSC2X51SDA170J

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Description
MSC2X51/50SDA170J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA170J are dual 1700 V, 50 A SiC SBD devices in a SOT-227 package. Figure 1 Parallel MSC2X51SDA170J Figure 2 Anti-parallel MSC2X50SDA170J Features The following are key features of the MSC2X51SDA170J and MSC2X50SDA170J devices: No reverse recovery Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X51SDA170J and MSC2X50SDA170J devices: Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant 053-4111 MSC2X51/50SDA170J Datasheet Revision A 1 Product Overview Applications The MSC2X51SDA170J and MSC2X50SDA170J devices are designed for the following applications: Power factor correction (PFC) Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters Snubber/clamp diode 053-4111 MSC2X51/50SDA170J Datasheet Revision A 2 Device Specifications Device Specifications This section shows the specifications of the MSC2X51SDA170J and MSC2X50SDA170J de...




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