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MSC360SMA120B

Microchip

Silicon Carbide N-Channel Power MOSFET

MSC360SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product lin...



MSC360SMA120B

Microchip


Octopart Stock #: O-1526745

Findchips Stock #: 1526745-F

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Description
MSC360SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC360SMA120B device is a 1200 V, 360 mΩ SiC MOSFET in a TO-24
More View 7 package. Features The following are key features of the MSC360SMA120B device: • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness • RoHS compliant Benefits The following are benefits of the MSC360SMA120B device: • High efficiency to enable lighter, more compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need for external freewheeling diode • Lower system cost of ownership Applications The MSC360SMA120B device is designed for the following applications: • PV inverter, converter, and industrial motor drives • Smart grid transmission and distribution • Induction heating and welding • H/EV powertrain and EV charger • Power supply and distribution © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00003990B-page 1 MSC360SMA120B Device Specifications 1. Device Specifications This section shows the specifications of the MSC360SMA120B device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC360SMA120B device. Table 1-1. Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD Parameter Drain source voltage Continuous drain current at TC = 25 °C Continuous drain current at TC = 100 °C Pulsed drain current1 Gate-source voltage Total power dissipation at TC = 25 °C Linear derating factor Ratings 1200 11 8 28 23 to –10 78 0.52 Unit V A V W W/°C Note:  1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC360SMA120B device. Table 1-2. Thermal and Mechanical Characteristics Symbol RθJC TJ TSTG TL Wt Characteristic/Test Conditions Min Junction-to-case thermal resistance Operating junction temperature –55 Storage temperature –55 Soldering temperature for 10 seconds (1.6 mm from case) Mounting torque, 6-32 or M3 screw Package weight Typ Max Unit 1.3 1.93 °C/W 175 °C 150 °C 300 °C 10 1.1 0.22 6.2 lbf-in N-m oz g 1.2 Electrical Performance The following table shows the static characteristics of the MSC360SMA120B device. TJ = 25 °C unless otherwise specified. Table 1-3. Static Characteristics Symbol Characteristic V(BR)DSS Drain-source breakdown voltage RDS(on) Drain-source on resistance1 Test Conditions VG






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