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MSC4000 Datasheet

Part Number MSC4000
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF AND MICROWAVE TRANSISTORS
Datasheet MSC4000 DatasheetMSC4000 Datasheet (PDF)

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC4000 Features • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 0.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4000 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is d.

  MSC4000   MSC4000






Part Number MSC400SMA330B4
Manufacturers Microchip
Logo Microchip
Description SiC N-Channel Power MOSFET
Datasheet MSC4000 DatasheetMSC400SMA330B4 Datasheet (PDF)

MSC400SMA330B4 3300 V, 400 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC400SMA330B4 device is a 3300 V, 400 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. Features The following are key features of the MSC400SMA330B4 device: • Low capacitances and low gate char.

  MSC4000   MSC4000







Part Number MSC4003
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF AND MICROWAVE TRANSISTORS
Datasheet MSC4000 DatasheetMSC4003 Datasheet (PDF)

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC4003 Features • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 2.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is d.

  MSC4000   MSC4000







Part Number MSC4001
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description RF AND MICROWAVE TRANSISTORS
Datasheet MSC4000 DatasheetMSC4001 Datasheet (PDF)

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC4001 Features • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4001 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is d.

  MSC4000   MSC4000







RF AND MICROWAVE TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC4000 Features • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 0.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4000 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0 – 4.4 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter PDISS IC VCC TJ TSTG Power Dissipation* Device Current* Collector Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation Value 3.89 0.15 30 +200 -65 to +200 45 Unit W A V °C °C °C/W Advanced Power Technology r.


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