MSC49N60X

MSC49N60X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features 40V,140A, RDS(ON) =2.8mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available RoHS compliant package Applications MB / VGA / Vcore POL Applications SMPS 2nd SR PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current - Continuous (TC=25°C) (Chip Limitation) Drain Current - Continuous (TC=100°C) (Chip Limitation) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Value 40 ±20 100 63 400 312 Unit V V A A A mJ Publication Order Number: [MSC49N60X] © Bruckewell Technology Corporation Rev. A -2016 MSC49N60X 40V N-Channel MOSFETs Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter IAS Single Pulse Avalanched Current2 Power Dissipation (TC=25°C) PD Power Dissipation - Derate above 25°C TJ Operating Junction Temperature Range TSTG Storage Temperature Range Value 79 135 1.08 -55 to +150 -55 to +150 Unit...