MSC80185
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
EMITTER BALLASTED CLASS A LINEAR...
MSC80185
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
. . . . . . .
EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz POUT = 28 dBm MIN. @ 2.0 GHz
.230 4L STUD (S027) hermetically sealed ORDER CODE MSC80185 BRANDING 80185
PIN CONNECTION
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DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
PDISS IC VCE TJ TSTG
Power Dissipation Device Bias Current
(see Safe Area)
— 300 20 200 − 65 to +200
W mA V °C °C
Collector-Emitter Bias
Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 35 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/6
MSC80185
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO ICEO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V
IE = 0mA IC = 0mA IB = 0mA IC = 100mA
50 3.5 20 — 15
— — — — —
— — — 0.5 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
G P* ∆ GP * COB
* Note:
f = 2.0 GHz f = 2.0 GHz f = 1 MHz
POUT = 28 dBm POUT = 28 dBm VCB ...
