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MSC80213

Advanced Semiconductor

NPN RF TRANSISTOR

MSC80213 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Bas...


Advanced Semiconductor

MSC80213

File Download Download MSC80213 Datasheet


Description
MSC80213 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: Hermetically Sealed Package Gold Metallization MAXIMUM RATINGS IC VCC VEB www.DataSheet4U.com 600 mA 26 V 3.5 V 11.5 W @ TC = 50 C -65 C to +200 C -65 C to +200 C 13 C/W O O O O O O PDISS TJ TSTG θJC 1 = Collector 2 = Emitter 3 = Base TRANS1.SYM CHARACTERISTICS SYMBOL BVCER BVCBO BVEBO ICBO hFE COB Pout PG ηC VCC = 22 V IC = 5.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V TC = 25 C O TEST CONDITIONS RBE = 10Ω MINIMUM 44 44 3.5 TYPICAL MAXIMUM UNITS V V V 0.5 IC = 250 mA f = 1.0 MHz 3.8 PIN = 0.38 W f = 2.3 GHz 10 40 30 300 5.0 mA pF W Db % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 MSC85623 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004 ...




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