MSC81010

MSC81010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 10 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD (S016) hermetically sealed ORDER CODE MSC81010 BRANDING 81010 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MSC81010 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 29 1.0 35 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 6.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81010 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 10mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA 45 3.5 45 — 15 — — — — — — — — 2.5 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 1.0 GHz f = 1.0 GHz f...