MSC81400M

MSC81400M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 400 W MIN. WITH 6.5 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE MSC81400M BRANDING 81400M PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC81400M "Super Power" transistor is a high peak pulse power device specifically designed for DME/TACAN avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch condition at any phase angle under full rated conditions. The MSC81400M is housed in the unique BIGPAC™ hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 80˚C) 1000 28 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.12 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC81400M ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 15mA IE = 1mA IC = 50mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 1A 65 3.5 65 — 15 — — — — — — — — 35 120 V V V mA — Te...