MSC81450M
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 2...
MSC81450M
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . .
REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN
.400 x .500 2LF L (S038) hermetically sealed ORDER CODE MSC81450M BRANDING 81450M
PIN CONNECTION
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DESCRIPTION The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 25:1 load mismatch at any phase angle under full rated conditions. The MSC81450M is housed in the unique BIGPAC™ package with internal input/output matching structures.
1. Collector 2. Base 3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 °C)
Symbol Parameter Value Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current* Collector-Supply
Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
910 28 55 250 − 65 to +200
W A V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.15 °C/W
*Applies only to rated RF amplifier operation
MSC81450M
ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC
Symbo l T est Con ditio ns Value Min. Typ . Max. Un it
BVCBO BVEBO BVCER ICES hFE DYNAMIC
Symbo l
IC = 15mA IE = 1mA IC = 50mA VCE = 50V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 1A
65 3.5 65 — 15
— — — — —
— — — 35 120
V V V mA —
Test Con dition s
Value Min . Typ . Max.
Unit
POUT ηc GP
Note:
f = 1090 MHz f = 109...