DatasheetsPDF.com

MSC83301 Datasheet

Part Number MSC83301
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Datasheet MSC83301 DatasheetMSC83301 Datasheet (PDF)

MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC83301 BRANDING 83301 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site b.

  MSC83301   MSC83301






Part Number MSC83305
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Datasheet MSC83301 DatasheetMSC83305 Datasheet (PDF)

MSC83305 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE BRANDING 83305 MSC83305 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometr.

  MSC83301   MSC83301







Part Number MSC83303
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Datasheet MSC83301 DatasheetMSC83303 Datasheet (PDF)

MSC83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC83303 BRANDING 83303 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballas.

  MSC83301   MSC83301







RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC83301 BRANDING 83301 PIN CONNECTION www.DataSheet4U.com DESCRIPTION The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83301 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 6.0 200 30 200 − 65 to +200 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 25 °C/W *Applies only to rated RF amplifier operation September 2, 1994 1/5 MSC83301 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol I C = 1 mA I E = 1 mA I C = 5 mA VCB = 28V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 100 mA 45 3.5 45 — 30 — — — — — — — — 0.5 30.


2007-07-06 : SK3891    SK3879    SK3888    SK3889    SK3914    SK3882    SK3916    SK3890    SK3885    SK3918   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)