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MSD05120V1

Maple Semiconductor

Silicon Carbide Diode

MSD05120V1 MSD05120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-...


Maple Semiconductor

MSD05120V1

File Download Download MSD05120V1 Datasheet


Description
MSD05120V1 MSD05120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Package A AC Type : TO-252(DPAK) Anode Cathode Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VRRM VRSM VDC IF IFRM IFSM IF.MAX Ptot TJ , Tstg Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current @Tc=25℃ @Tc=125℃ @Tc=150℃ Repetitive Peak Forward Surge Current...




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