www.DataSheet4U.com
MSD42SWT1
Preferred Device
NPN Silicon General Purpose High Voltage Transistor
This NPN Silicon Pl...
www.DataSheet4U.com
MSD42SWT1
Preferred Device
NPN Silicon General Purpose High
Voltage Transistor
This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Features http://onsemi.com
COLLECTOR 3
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 300 300 6.0 150 Unit Vdc Vdc Vdc mAdc 1 BASE
2 EMITTER
3 1 2
THERMAL CHARACTERISTICS
Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 −55 to +150 Unit mW °C °C
SC−70 (SOT−323) CASE 419 STYLE 3
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown
Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown
Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown
Voltage (IE = 100 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Ga...