MSD4N60
600V N-Channel MOSFET
Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer wi...
MSD4N60
600V N-Channel
MOSFET
Description The MSD4N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Low power battery chargers Switch mode power supply (SMPS) DC-AC converters. Packing & Order Information Part No./ R:2,500/Reel Part No./ T:80/Tube , 4,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter
VDSS
Drain-Source
Voltage
VGS Gate-Source
Voltage
Continuous Drain Current (TC=25°C) ID
Continuous Drain Current (TC=100°C)
IDM Pulsed Drain Current
Value 600 ±30 4.5 2.6 18
Unit V V A A A
Publication Ord...