MSE20N06N Dual N-Channel 20-V (D-S) MOSFET
FEATURES • Low RDS(on) trench technology • Low thermal impedance • Fast switc...
MSE20N06N Dual N-Channel 20-V (D-S)
MOSFET
FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players
Bruckewell Technology Corp., Ltd.
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
Electrical Characteristics
Bruckewell Technology Corp., Ltd.
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Characteristic Curves
Bruckewell Technology Corp., Ltd.
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