MSF10N60
600V N-Channel MOSFET
Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer ...
MSF10N60
600V N-Channel
MOSFET
Description The MSF10N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Power Factor Correction LCD TV Power Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage
Drain Current -Continuous (TC=25°C) ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
Value 600 ±30 9.5 5.7 38 700 9.5 15.6 4.5
Unit V V A A A mJ A mJ
V/ns
Publication Order Number: [MSF10N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF10N60
600V N-Channel
MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Power Dissipation (TC = 25 °C) PD
Power Dissipation (TC=100°C)
TJ,TSTG
Operating and Storage Temperature Range
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS=9.5A, VDD=50V, RG=25Ω,...