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MSF10N80A
800V N-Channel MOSFET
Description
MSF10N80A 800V N-Channel
MOSFET
FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol VDSS ID IDM VGS EAS IAR EAR dv...
Bruckewell
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MSF10N80
800V N-Channel MOSFET
- Bruckewell
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