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MSG20T65FQC Datasheet

Part Number MSG20T65FQC
Manufacturers maspower
Logo maspower
Description MOSFET
Datasheet MSG20T65FQC DatasheetMSG20T65FQC Datasheet (PDF)

Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C  RoHS product MSG20T65FQS/T/C Applications  General purpose inverters  UPS Absolute Ratings(Tc=25℃) Parameter Collector-Emmiter Voltage Collector Current-continuous Symbol MSG2 MSG2 MSG2 0T65F 0T65F 0T65F Unit QS QT QC Vces 650 V Ic T=25℃ 40 A T=100℃ 20 A Collector Current-pulse(note 1) ICM 80 A Diode RMS forward current IF T=25℃ T=100℃ 40 20 A A Gate-Emmite.

  MSG20T65FQC   MSG20T65FQC






Part Number MSG20T65FQT
Manufacturers maspower
Logo maspower
Description MOSFET
Datasheet MSG20T65FQC DatasheetMSG20T65FQT Datasheet (PDF)

Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C  RoHS product MSG20T65FQS/T/C Applications  General purpose inverters  UPS Absolute Ratings(Tc=25℃) Parameter Collector-Emmiter Voltage Collector Current-continuous Symbol MSG2 MSG2 MSG2 0T65F 0T65F 0T65F Unit QS QT QC Vces 650 V Ic T=25℃ 40 A T=100℃ 20 A Collector Current-pulse(note 1) ICM 80 A Diode RMS forward current IF T=25℃ T=100℃ 40 20 A A Gate-Emmite.

  MSG20T65FQC   MSG20T65FQC







Part Number MSG20T65FQS
Manufacturers maspower
Logo maspower
Description MOSFET
Datasheet MSG20T65FQC DatasheetMSG20T65FQS Datasheet (PDF)

Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C  RoHS product MSG20T65FQS/T/C Applications  General purpose inverters  UPS Absolute Ratings(Tc=25℃) Parameter Collector-Emmiter Voltage Collector Current-continuous Symbol MSG2 MSG2 MSG2 0T65F 0T65F 0T65F Unit QS QT QC Vces 650 V Ic T=25℃ 40 A T=100℃ 20 A Collector Current-pulse(note 1) ICM 80 A Diode RMS forward current IF T=25℃ T=100℃ 40 20 A A Gate-Emmite.

  MSG20T65FQC   MSG20T65FQC







MOSFET

Features  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ =1.6V,IC=20A and TC =25°C  RoHS product MSG20T65FQS/T/C Applications  General purpose inverters  UPS Absolute Ratings(Tc=25℃) Parameter Collector-Emmiter Voltage Collector Current-continuous Symbol MSG2 MSG2 MSG2 0T65F 0T65F 0T65F Unit QS QT QC Vces 650 V Ic T=25℃ 40 A T=100℃ 20 A Collector Current-pulse(note 1) ICM 80 A Diode RMS forward current IF T=25℃ T=100℃ 40 20 A A Gate-Emmiter Voltage Turn-off safe area Surge non repetitive forward current tp=10ms sinusoidal VGES - IFSM ±20 V 180 A 80 A Power Dissipation PD TC=25℃ 156 35 162 W Diode Forward Current TC=100℃ 20 A Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃ Maximum Lead Temperature for Soldering Purposes TL 300 ℃ *Collector current limited by maximum Junction temperature Thermal Characteristic Parameter Collector-Emmiter Voltage H1.01 Symbol Tests conditions Min Typ Max Units Off-Characteristics BVCES IC=500μA,VGE=0V 650 - - V Maspower 1 MSG20T65FQS/T/C Breakdown Voltage Temperature Coefficient △BVCES/△TJ IC=1mA,referenced to 25℃ - 0.5 - V/℃ Zero Gate Voltage Collector Current ICES VCE=650V,VGE=0V, TC=25℃ - 10 μA Gate-body leakage current Gate-Emmiter Threshold Voltage Collector-Emmiter saturation Voltage Short Collector current (Note 2) Input capacitance Output capacitance Reverse transfer capacitance IGESF VCE=0V,VGE=±20V - - 200 nA On-Characteris.


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