MSG33001

Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 Unit: mm ■ Features Compatible between high breakdown voltage and high cutoff frequency Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm) 3 0.15 min. 0.80±0.05 1.20±0.05 0.52±0.03 0 to 0.01 5˚ (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.23+0.05 –0.02 1 2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg mm2 Rating 9 6 1 30 100 125 −55 to +125 Unit V V V mA mW °C °C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 5S Note) *: Copper plate at the collector is 5.0 mm × 0.8 mm. on substrate at 10 mm × 12 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Forward transfer gain Noise figure Collector output capacitance (Common base, input open circuited) Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 3 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 ...