Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
• Compatible between high breakdown voltage an...
Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier ■ Features
Compatible between high breakdown
voltage and high cut-off frequency Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) Reduction of the mounting area and assembly cost by one half
0.12+0.03 -0.02 6 5 4
Unit: mm
0.80±0.05
1.00±0.04
0 to 0.02
MSG33004 + MSG33001
(0.35) (0.35) 1.00±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Tr2
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Display at No.1 lead
VCBO VCEO VEBO IC VCBO VCEO VEBO IC PT Tj Tstg
9 6 1 100 9 6 1 30 125 125 −55 to +125
V V V mA V V V
1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2)
0.37+0.03 -0.02
4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package
Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current
Marking Symbol: 6D Internal Connection
6 Tr1 5 4 Tr2
mA mW °C °C
Overall
Total power dissipation * Junction temperature Storage temperature
1
2
3
Note) *:
Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm.
■ Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current tra...