Transistors
MSG43001
SiGe HBT type
For low-noise RF amplifier ■ Features
• Compatible between high breakdown voltage an...
Transistors
MSG43001
SiGe HBT type
For low-noise RF amplifier ■ Features
Compatible between high breakdown
voltage and high cutoff frequency Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
Unit: mm
1 1.00±0.05
0.60±0.05
3
2
0.39+0.01 −0.03
0.15±0.05 0.05±0.03 0.35±0.01
0.25±0.05
0.50±0.05
0.25±0.05 1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Collector power dissipation* Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 30 100 125 −55 to +125 Unit V V V mA mW °C °C
3
0.65±0.01
2 0.05±0.03
1: Base 2: Emitter 3: Collector ML3-N2 Package
Marking Symbol: 3N
Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Forward transfer gain Noise figure Collector output capacitance (Common base, input open circuited) Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 3 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f...