MSG43004

Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 0.60±0.05 Unit: mm ■ Features Compatible between high breakdown voltage and high cut-off frequency Low noise, high-gain amplification Optimal size reduction and high level integration for ultra-small packages 3 2 1 1.00±0.05 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 100 100 125 −55 to +125 Unit V V V mA mW °C °C 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 5Y Note) *: Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm × 0.8 mm. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 15 mA VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz Min Typ Max 1 1 1 Unit µA µA µA  GHz dB 100 17 6.0 9.0 1.4 0.6 220 Forw...