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MSH20120V1

Maple Semiconductor

Silicon Carbide Diode

MSH20120V1 MSH20120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-...


Maple Semiconductor

MSH20120V1

File Download Download MSH20120V1 Datasheet


Description
MSH20120V1 MSH20120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Package Type : TO-247-2Lead PIN 1 AC PIN 2 Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter MSH20120V1 VRRM VRSM VDC IF IFRM Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current @Tc=25℃ @Tc=125℃ @Tc=137℃ Repetitive Peak Forward Surge Current @TC=25 ̊C, tP = 10 m...




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