E2G0108-18-42
¡ Semiconductor MSM5117400C
¡ Semiconductor
This version: Apr. 1998 MSM5117400C
Pr el im in ar y
4,194...
E2G0108-18-42
¡ Semiconductor MSM5117400C
¡ Semiconductor
This version: Apr. 1998 MSM5117400C
Pr el im in ar y
4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5117400C is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM5117400C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MSM5117400C is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.
FEATURES
4,194,304-word ¥ 4-bit configuration Single 5 V power supply, ± 10% tolerance Input : TTL compatible, low input capacitance Output : TTL compatible, 3-state Refresh : 2048 cycles/32 ms Fast page mode, read modify write capability CAS before RAS refresh, hidden refresh, RAS-only refresh capability Multi-bit test mode capability Package options: 26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5117400C-xxSJ) 26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5117400C-xxTS-K) (TSOPII26/24-P-300-1.27-L) (Product : MSM5117400C-xxTS-L) xx indicates speed rank.
PRODUCT FAMILY
Family MSM5117400C-50 MSM5117400C-60 MSM5117400C-70 Access Time (Max.) tRAC tAA tCAC tOEA 50 ns 25 ns 13 ns 13 ns 60 ns 30 ns 15 ns 15 ns 70 ns 35 ns 20 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 90 ns 110 ns 130 ns 660 mW 605 mW 550 mW 5.5 mW
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