MSM512100

www.DataSheet4U.com E2G0016-17-41 ¡ Semiconductor MSM512100/L ¡ Semiconductor This version: Jan. 1998 MSM512100/L Previous version: May 1997 2,097,152-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM512100/L is a 2,097,152-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM512100/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMOS process. The MSM512100/L is available in a 26/20-pin plastic SOJ. The MSM512100L (the low-power version) is specially designed for lower-power applications. FEATURES 2,097,152-word ¥ 1-bit configuration Single 5 V power supply, ± 10% tolerance Input : TTL compatible, low input capacitance Output : TTL compatible, 3-state Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version) Fast page mode, read modify write capability CAS before RAS refresh, hidden refresh, RAS-only refresh capability Multi-bit test mode capability Package: 26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM512100/L-xxSJ) xx indicates speed rank. PRODUCT FAMILY Family MSM512100/L-60 MSM512100/L-70 MSM512100/L-80 Access Time (Max.) tRAC tAA tCAC tOEA 60 ns 30 ns 15 ns 15 ns 70 ns 35 ns 20 ns 20 ns 80 ns 40 ns 20 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 110 ns 130 ns 150 ns 440 mW 385 mW 330 mW 5.5 mW/ 0.55 mW (L-version) www.DataSheet4U.c...