¡ Semiconductor MSM51V18165B/BSL
¡ Semiconductor
MSM51V18165B/BSL
E2G0087-17-41
1,048,576-Word ¥ 16-Bit DYNAMIC RAM : ...
¡ Semiconductor MSM51V18165B/BSL
¡ Semiconductor
MSM51V18165B/BSL
E2G0087-17-41
1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM51V18165B/BSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal
CMOS process. The MSM51V18165B/BSL is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP. The MSM51V18165BSL (the self-refresh version) is specially designed for lower-power applications.
FEATURES
1,048,576-word ¥ 16-bit configuration Single 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible, low input capacitance Output : LVTTL compatible, 3-state Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (SL version) Fast page mode with EDO, read modify write capability CAS before RAS refresh, hidden refresh, RAS-only refresh capability CAS before RAS self-refresh capability (SL version) Package options: 42-pin 400 mil plastic SOJ (SOJ42-P-400-1.27) (Product : MSM51V18165B/BSL-xxJS) 50/44-pin 400 mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM51V18165B/BSL-xxTS-K) xx indicates speed rank.
PRODUCT FAMILY
Family Access Time (Max.) tRAC tAA tCAC tOEA Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 84 ns 104 ns 124 ns 684 mW 576 mW 504 mW 1.8 mW/ 0.72 mW (SL version)
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