MSM54V16273

FEDS54V16273-05 www.DataSheet4U.com ¡ Semiconductor MSM54V16273 262,144-Word ¥ 16-Bit Multiport DRAM This version: Feb. 2000 Previous version: Jan. 1998 DESCRIPTION The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM54V16273 features block write, flash write functions, extended page mode on the RAM port, a split data transfer capability, and programmable stops on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops. FEATURES Single power supply: 3.3 V ± 0.3 V RAS only refresh Full TTL compatibility CAS before RAS refresh Multiport organization CAS before RAS self-refresh RAM : 256K word ¥ 16 bits Hidden refresh SAM : 512 word ¥ 16 bits Serial read/write Extended page mode 512 tap location Write per bit Programmable stops Persistent write per bit Bidirectional data transfer Byte read/write Split transfer Masked flash write Masked write transfer Masked block write (8 columns) Refresh: 512 cycles/8 ms Package options: 64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K) (Product : MSM54V16273-xxGS-...