MSM54V24616

in im el Pr ¡ Semiconductor MSM54V24616 ¡ Semiconductor 131,072-Word ¥ 16-Bit ¥ 2-bank SYNCHRONOUS DYNAMIC RAM MSM54V24616 y ar DESCRIPTION The MSM54V24616 is a 131,072-word ¥ 16-bit ¥ 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. This device can operate up to 125MHz by using synchronous interface. FEATURES 131,072-words ¥ 16-bit ¥ 2 banks configuration Single 3.3 V± 10% power supply LVTTL compatible inputs and outputs www.DataSheet4U.com All input signals are latched at rising edge of system clock Auto precharge and controlled precharge Internal pipelined operation: column address can be changed every clock cycle Dual internal banks controlled by A9 (Bank Address: BA) Independent byte operation via DQML and DQMU Programmable burst sequence (Sequential / Interleave) Programmable burst length (1, 2, 4, 8 and full page) Programmable CAS latency (1, 2 and 3) Programmable Write burst (Burst write / Single write) Burst stop function (full-page burst) Power Down operation and Active Power Down (Clock Suspend) operation Auto refresh and Self refresh capability Refresh period: 1,024 cycles / 16 ms Package options: 50-pin plastic TSOP (type II) (TSOPII50-P-400-0.80-K) (Product : MSM54V24616-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM54V24616-8 MSM54V24616-10 MSM54V24616-12 Max. Frequency 125 MHz 100 MHz 83MHz Acce...