MSM56V16800E

E2G1053-18-54 ¡ Semiconductor MSM56V16800E ¡ Semiconductor This version: Jul. 1998 MSM56V16800E 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank ¥ 1,048,576-word ¥ 8-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode – CAS latency (1, 2, 3) – Burst length (1, 2, 4, 8, full page) – Data scramble (sequential, interleave) CBR auto-refresh, Self-refresh capability Package: 44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800E-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM56V16800E-8 MSM56V16800E-10 Max. Frequency 125 MHz 100 MHz Access Time (Max.) tAC1 22 ns 27 ns tAC2 10 ns 9 ns tAC3 6 ns 9 ns 1/30 ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) MSM56V16800E VCC DQ1 VSSQ DQ2 VCCQ DQ3 VSSQ DQ4 VCCQ NC NC WE CAS RAS CS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22  DQM DQi VCC VSS VCCQ VSSQ NC 44 VSS 43 DQ8 42 VSSQ 41 DQ7 40 VCCQ 39 DQ6 38 VSSQ 37 DQ5 36 VCCQ 35 NC 34 NC 33 DQM 32 CLK 31 CKE 30 NC 29 A9 28 A8 27 A7 26 A6 25 A5 24 A4 23 VSS 44-Pin Plast...