MSN0260D
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Application
● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schem.
N-Channel MOSFET
MSN0260D
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =60A RDS(ON) <6mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Application
● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0260D
MSN0260D
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor Single pulse avalanche energy (Note.