MSN0325R
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10...
MSN0325R
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● SMPS and general purpose applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin Assignment
PIN Configuration
DFN 3x3 EP top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0325R
MSN0325R
DFN 3x3 EP
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100...
