MSN0380D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10...
MSN0380D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0380D
MSN0380D
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Derating factor Sin...
