MSN0409W
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process tech...
